Báo Cáo SMaterial and SAW properties of AlN thin film deposited by reactive RF magnetron sputtering method o

SMaterial and SAW properties of AlN thin film deposited by reactive RF magnetron sputtering method on various substrates
AlN thin film for SAW filter application was deposited on various substrates such as (100) silicon,
sapphire, Si[SUB]3[/SUB]N[SUB]4[/SUB]/Si subatrates by reactive magnetron sputtering method. The structural property was
dependent on the deposition conditions such as sputtering pressure, RF power, substrate temperature,
and nitrogen partial pressure. Scanning Electron Microscope(SEM), X-ray diffraction(XRD), and
Atomic Force Microscope(AFM) have been used to find out structural properties and preferred
orientations of AlN thin films. Preferred orientation and SAW characteristic of AlN were improved by
insertion of Al[SUB]2[/SUB]O[SUB]3[/SUB] buffer layer. Insertion loss of SAW devices using AlN/Si and AlN/Al[SUB]2[/SUB]O[SUB]3[/SUB]/Si were
about 33.27[dB] and 30.20[dB] individually.